7/29/2019 2SK213

1/7

2SK213, 2SK214, 2SK215, 2SK216

Silicon N-Channel MOS FET

ADE-208-1241 (Z)1st. EditionMar. 2001

Application

High frequency and low frequency power amplifier, high speed switching.

Complementary pair with 2SJ76, J77, J78, J79

Features

Suitable for direct mounting

High forward transfer admittance

Excellent frequency response

Enhancement-mode

Outline

1 23

TO-220AB

1. Gate

2. Source

(Flange)

3. Drain

D

G

S

7/29/2019 2SK213

2/7

2SK213, 2SK214, 2SK215, 2SK216

Absolute Maximum Ratings (Ta = 25C)

Item Symbol Ratings Unit

Drain to source voltage 2SK213 VDSX 140 V

2SK214 160

2SK215 180

2SK216 200

Gate to source voltage VGSS 15 V

Drain current ID 500 mA

Body to drain diode reverse drain current IDR 500 mA

Channel dissipation Pch 1.75 W

Pch*1 30 W

Channel temperature Tch 150 C

Storage temperature Tstg 45 to +150 C

Note: 1. Value at TC = 25C

Electrical Characteristics (Ta = 25C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source 2SK213 V(BR)DSX 140 V ID = 1 mA, VGS = 2 V

breakdown voltage 2SK214 160 V

2SK215 180 V

2SK216 200 V

Gate to source breakdown

voltag

V(BR)GSS 15 V IG = 10 A, VDS = 0

Gate to source voltage VGS(on) 0.2 1.5 V ID = 10 mA, VDS = 10 V *1

Drain to source saturation

voltage

VDS(sat) 2.0 V ID = 10 mA, VGD = 0 *1

Forward transfer admittance |yfs| 20 40 mS ID = 10 mA, VDS = 20 V *1

Input capacitance Ciss 90 pF ID = 10 mA, VDS = 10 V,

Reverse transfer capacitance Crss 2.2 pF f = 1 MHz

Note: 1. Pulse test

7/29/2019 2SK213

3/7

2SK213, 2SK214, 2SK215, 2SK216

50 1000

Case Temperature TC (C)

150

20

Channe

lDiss

ipa

tion

Pc

h(W)

Power vs. Temperature Derating

40

60

100

200

300

Typical Output Characteristics

12

400

500

Drain to Source Voltage VDS (V)

TC = 25C

3.0

VGS = 0.5 V

2.5

2.0

1.5

1.0

3.5

Dra

inCurrent

ID(mA)

16840 20

Typical Output Characteristics

0.8

VGS = 0.1V

TC = 25C

10

20

30

60

40

50

Drain to Source Voltage VDS (V)

Drain

Curren

tID(mA)

8040200 100

0.7

0.6

0.5

0.4

0.30.2

TC

=

25C

25

75

Typical Transfer Characteristics

3

Gate Source Voltage VGS (V)

4210 5

100

200

300

400

500

Drain

Curren

tID(mA)

0

VDS = 20 V

7/29/2019 2SK213

4/7

2SK213, 2SK214, 2SK215, 2SK216

T

C

=

25C

25

75

Typical Transfer Characteristics

1.2

Gate Source Voltage VGS (V)

1.60.80.40 2.0

20

40

60

80

100

Dra

inCurren

tID(mA)

0

VDS = 20 V

Forward Transfer Admittance

vs. Drain Current

TC = 25C

VDS = 20 V

50

Drain Current ID (mA)

1001052 200

10

20

50

100

200

Forward

Trans

fer

Adm

ittanc

e

yfs

(mS)

5

20

100

10 k 100 k

1.0

10

Forward

Trans

ferA

dm

ittance

yfs

(mS)

Forward Transfer Admittance

vs. Frequency

1 M

500

50 M0.05

5 k

0.1

Frequency f (HZ)

10 M

TC = 25CV

DS= 20 V

ID = 10 mA

7/29/2019 2SK213

5/7

2SK213, 2SK214, 2SK215, 2SK216

Package Dimensions

0.5 0.12.54 0.5

0.76 0.114

.0

0.5

15

.0

0.3

2.7

9

0.2

18

.5

0.5

7

.8

0.5

10.16 0.2

2.54 0.5

1.26 0.15

4.44 0.2

2.7 MAX

1.5 MAX

11.5 MAX

9.5

8.0

1

.27 6

.4+

0.2

0

.1

3.6+0.1-0.08

Hitachi CodeJEDECEIAJMass (reference value)

TO-220ABConformsConforms1.8 g

As of January, 2001Unit: mm

7/29/2019 2SK213

6/7

2SK213, 2SK214, 2SK215, 2SK216

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent,

copyright, trademark, or other intellectual property rights for information contained in this document.

Hitachi bears no responsibility for problems that may arise with third partys rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachis sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductorproducts.

Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, JapanTel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.

Hitachi Asia Ltd.Hitachi Tower16 Collyer Quay #20-00,Singapore 049318Tel : -538-6533/538-8577Fax : -538-6933/538-3877URL : http://www.hitachi.com.sg

URL NorthAmerica : http://semiconductor.hitachi.com/Europe : http://www.hitachi-eu.com/hel/ecgAsia : http://sicapac.hitachi-asia.com

Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Asia Ltd.(Taipei Branch Office)4/F, No. 167, Tun Hwa North Road,Hung-Kuo Building,Taipei (105), TaiwanTel : -(2)-2718-3666Fax : -(2)-2718-8180

Telex : 23222 HAS-TPURL : http://www.hitachi.com.tw

Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower,World Finance Centre,Harbour City, Canton RoadTsim Sha Tsui, Kowloon,Hong KongTel : -(2)-735-9218Fax : -(2)-730-0281URL : http://www.hitachi.com.hk

Hitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham RoadMaidenheadBerkshire SL6 8YA, United KingdomTel: (1628) 585000

Fax: (1628) 585160

Hitachi Europe GmbHElectronic Components GroupDornacher Strae 3D-85622 Feldkirchen, MunichGermanyTel: (89) 9 9180-0Fax: (89) 9 29 30 00

Hitachi Semiconductor(America) Inc.179 East Tasman Drive,San Jose,CA 95134Tel: (408) 433-1990Fax: (408) 433-0223

For further information write to:

Colophon 2 0

7/29/2019 2SK213

7/7

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

http://www.datasheetcatalog.com/http://www.datasheetcatalog.com/http://www.datasheetcatalog.com/http://www.datasheetcatalog.com/