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Philips Semiconductors Product specificatio

Silicon Diffused Power Transistor BU2508AX

GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptionaltolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 VVCEO Collector-emitter voltage (open base) - 700 VIC Collector current (DC) - 8 AICM

Collector current peak value - 15 APtot Total power dissipation Ths 25 C - 45 WVCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.12 A - 1.0 VICsat Collector saturation current 4.5 - Atf Fall time ICsat = 4.5 A; IB(end) = 1.1 A 0.4 0.6 s

PINNING - SOT399 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 base

2 collector

3 emitter

case isolated

LIMITING VALUESLimiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 VVCEO Collector-emitter voltage (open base) - 700 VIC Collector current (DC) - 8 AICM Collector current peak value - 15 AIB Base current (DC) - 4 A

IBM Base current peak value - 6 A-IB(AV) Reverse base current average over any 20 ms period - 100 mA-IBM Reverse base current peak value

1 - 5 APtot Total power dissipation Ths 25 C - 45 WTstg Storage temperature -55 150 CTj Junction temperature - 150 C

THERMAL RESISTANCES


Rth j-hs Junction to heatsink without heatsink compound - 3.7 K/W

Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W

Rth j-a Junction to ambient in free air 35 - K/W

case

1 2 3

b

c

e

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ISOLATION LIMITING VALUE & CHARACTERISTICThs = 25 C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Visol Repetitive peak voltage from all R.H. 65 % ; clean and dustfree - 2500 Vthree terminals to externalheatsink

Cisol Capacitance from T2 to external f = 1 MHz - 22 - pFheatsink

STATIC CHARACTERISTICSThs = 25 C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICES Collector cut-off current2 VBE = 0 V; VCE = VCESMmax - - 1.0 mA

ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mATj = 125 C

IEBO Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mABVEBO Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - VVCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V

L = 25 mHVCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.12 A - - 1.0 VVBEsat Base-emitter saturation voltage IC = 4.5 A; IB = 1.7 A - - 1.1 VhFE DC current gain IC = 100 mA;VCE = 5 V - 13 -hFE IC = 4.5 A;VCE = 1 V 4 5.5 7.0

DYNAMIC CHARACTERISTICSThs = 25 C unless otherwise specified


Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 80 - pF

Switching times (16 kHz line ICsat = 4.5 A; IB(end) = 1.1 A; LB = 6 H;deflection circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/s)

ts Turn-off storage time 5.0 6.0 stf Turn-off fall time 0.4 0.6 s

Switching times (38 kHz line ICsat = 4.0 A; IB(end) = 0.9 A; LB = 6 H;deflection circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/s)

ts Turn-off storage time 4.7 5.7 stf Turn-off fall time 0.25 0.35 s

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Fig.1. Test circuit for VCEOsust.

Fig.2. Oscilloscope display for VCEOsust.

Fig.3. Switching times waveforms.

Fig.4. Switching times definitions.

Fig.5. Switching times test circuit.

Fig.6. Typical DC current gain. hFE

= f (IC)

parameter VCE

+ 50v

100-200R

Horizontal

Vertical

Oscilloscope

1R

6V30-60 Hz

100R

ICsat

90 %

10 %

tf

ts

IBend

IC

IB

t

t

- IBM

VCE / V min

VCEOsust

IC / mA

100

200

250

0

+ 150 v nominal

adjust for ICsat

1mH

BY22812nF

D.U.T.LBIBend

-VBB

IC

IB

VCE

ICsat

IBend

64us

26us20us

t

t

t

TRANSISTOR

DIODE

0.01 1

100

10

10.1 10

h

IC / A

FE

Tj = 25 C

Tj = 125 C

5V

1V

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Fig.7. Typical base-emitter saturation voltage.VBEsat = f (IC); parameter IC/IB

Fig.8. Typical collector-emitter saturation voltage.VCEsat = f (IC); parameter IC/IB

Fig.9. Typical base-emitter saturation voltage.VBEsat = f (IB); parameter IC

Fig.10. Typical collector-emitter saturation voltage.VCEsat = f (IB); parameter IC

Fig.11. Typical turn-off losses.Tj = 85CEoff = f (IB); parameter IC; f = 16 kHz

Fig.12. Typical collector storage and fall time.ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 16 kHz

0.1 1 10 IC / A

VBESAT / V1.2

1.1

1

0.9

0.8

0.7

0.6

0.5

0.4

Tj = 25 C

Tj = 125 C

3

45

IC/IB=

0.1 1 10IB / A

VCESAT / V10

1

0.1

Tj = 25 C

Tj = 125 C

3A

4.5A

6A

IC=2A

0.1 1 10 IC / A

VCESAT / V1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

Tj = 25 C

Tj = 125 C

5

4

3

IC/IB=

0.1 1 10IB / A

Eoff / uJ1000

100

10

3.5A

IC = 4.5A

0 1 2 3 4 IB / A

VBESAT / V1.2

1.1

1

0.9

0.8

0.7

0.6

6A4.5A3A2A

Tj = 25 C

Tj = 125 C

IC=

0.1 1 10IB / A

ts, tf / us12

1110

9

8

7

6

5

4

3

2

1

0

IC =

3.5A4.5A

tf

ts

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Fig.13. Forward bias safe operating area. Ths= 25CI Region of permissible DC operation.II Extension for repetitive pulse operation.

NB: Mounted with heatsink compound and30 5 newton force on the centre ofthe envelope.

Fig.14. Normalised power dissipation.PD% = 100PD/PD 25C= f (Ths)

Fig.15. Forward bias safe operating area. Ths= 25CI Region of permissible DC operation.II Extension for repetitive pulse operation.

NB: Mounted without heatsink compound and30 5 newton force on the centre ofthe envelope.

1 10 100 1000

100

10

1

0.1

0.01

tp =

10 us

100 us

1 ms

10 ms

DC

IC / A

VCE / V

ICM max

IC max

= 0.01

II

I

Ptot max

1 10 100 1000

100

10

1

0.1

0.01

tp =

10 us

100 us

1 ms

10 ms

DC

IC / A

VCE / V

ICM max

IC max

= 0.01

II

I

Ptot max

0 20 40 60 80 100 120 140

Ths / C

PD% Normalised Power Derating120

110

100

90

80

70

60

50

40

30

20

10

0

with heatsink compound

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MECHANICAL DATA

Dimensions in mm

Net Mass: 5.88 g

Fig.16. SOT399; The seating plane is electrically isolated from all terminals.

Notes1. Refer to mounting instructions for F-pack envelopes.2. Epoxy meets UL94 V0 at 1/8".

4.5

16.0 max

0.7

10.0

5.1

27

max

18.1

min4.5

2.2 max

1.1

0.4 M

5.45 5.45

25

25.1

3.0

25.7

5.8 max

3.3

0.95 max2

3.3

22.5

max

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DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.

LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.

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