fdpf5n50ut

7/29/2019 FDPF5N50UT

1/10

tm

May2012

FDP5N50U

/F

DPF5N50UTN-Channe

lMOSFET,FRFET

2012 Fairchild Semiconductor CorporationFDP5N50U / FDPF5N50UT Rev.C1

www.fairchildsemi.com1

Ultra FRFETTM

FDP5N50U / FDPF5N50UTN-Channel MOSFET, FRFET

500V, 4A, 2.0

Features

RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2A

Low gate charge ( Typ. 11nC)

Low Crss ( Typ. 5pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

RoHS compliant

Description

These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchilds proprietary, planar stripe,

DOMS technology.

This advance technology has been especially tailored to mini-

mize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

commutationmode. These devices are well suited for high effi-

cient switched mode power supplies and active power factor cor-

rection.

D

G

S

TO-220

FDP SeriesG D STO-220F

FDPF Series

(potted)

G SD

MOSFET Maximum Ratings TC = 25oC unless otherwise noted*

Thermal Characteristics

Symbol Parameter FDP5N50U FDPF5N50UT Units

VDSS Drain to Source Voltage 500 V

VGSS Gate to Source Voltage 30 V

ID Drain Current-Continuous (TC = 25

oC) 4 4*A

-Continuous (TC = 100oC) 2.4 2.4*

IDM Drain Current - Pulsed (Note 1) 16 16* A

EAS Single Pulsed Avalanche Energy (Note 2) 216 mJ

IAR Avalanche Current (Note 1) 4 A

EAR Repetitive Avalanche Energy (Note 1) 8.5 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns

PD Power Dissipation(TC = 25

oC) 85 28 W

- Derate above 25oC 0.67 0.22 W/oC

TJ, TSTG Operating and Storage Temperature Range -55 to +150oC

TLMaximum Lead Temperature for Soldering Purpose,

1/8 from Case for 5 Seconds300 oC

Symbol Parameter FDP5N50U FDPF5N50UT Units

RJC Thermal Resistance, Junction to Case 1.4 4.5

oC/WRCS Thermal Resistance, Case to Sink Typ. 0.5 -

RJA Thermal Resistance, Junction to Ambient 62.5 62.5

*Drain current limited by maximum junction temperature

7/29/2019 FDPF5N50UT

2/10

FDP5N50U

/F

DPF5N50UTN-Channe

lMOSFET,FRFET

FDP5N50U / FDPF5N50UT Rev.C1 www.fairchildsemi.com2

Package Marking and Ordering Information TC = 25oC unless otherwise noted

Electrical Characteristics

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking Device Package Reel Size Tape Width Quantity

FDP5N50U FDP5N50U TO-220 - - 50

FDPF5N50UT FDPF5N50UT TO-220F - - 50

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain to Source Breakdown Voltage ID = 250A, VGS = 0V, TJ = 25oC 500 - - V

BVDSS TJ

Breakdown Voltage Temperature

CoefficientID = 250A, Referenced to 25

oC - 0.7 - V/oC

IDSS Zero Gate Voltage Drain CurrentVDS = 500V, VGS = 0V - - 25

AVDS = 400V, TC = 125

oC - - 250

IGSS Gate to Body Leakage Current VGS = 30V, VDS = 0V - - 100 nA

VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250A 3 - 5 V

RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 2A - 1.65 2 g

FSForward Transconductance V

DS= 40V, I

D= 2A (Note 4) - 4.8 - S

Ciss Input CapacitanceVDS = 25V, VGS = 0V

f = 1MHz

- 485 650 pF

Coss Output Capacitance - 65 90 pF

Crss Reverse Transfer Capacitance - 5 8 pF

Qg(tot) Total Gate Charge at 10V

VDS = 400V, ID = 4A

VGS = 10V(Note 4, 5)

- 11 15 nC

Qgs Gate to Source Gate Charge - 3 - nC

Qgd Gate to Drain Miller Charge - 5 - nC

td(on) Turn-On Delay Time

VDD = 250V, ID = 4A

RG

= 25

(Note 4, 5)

- 14 38 ns

tr Turn-On Rise Time - 21 52 ns

td(off) Turn-Off Delay Time - 27 64 nstf Turn-Off Fall Time - 20 50 ns

IS Maximum Continuous Drain to Source Diode Forward Current - - 4 A

ISM Maximum Pulsed Drain to Source Diode Forward Current - - 16 A

VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 4A - - 1.6 V

trr Reverse Recovery Time VGS = 0V, ISD = 4AdIF/dt = 100A/s (Note 4)

- 36 - ns

Qrr Reverse Recovery Charge - 33 - nC

Notes:1: Repetitive Rating: Pulse width limited by maximum junction temperature2: L = 27mH, IAS = 4A, VDD = 50V, RG = 25, Starting TJ = 25C3: ISD 4A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C4: Pulse Test: Pulse width 300s, Duty Cycle 2%5: Essentially Independent of Operating Temperature Typical Characteristics

7/29/2019 FDPF5N50UT

3/10

FDP5N50U

/F

DPF5N50UTN-Channe

lMOSFET,FRFET


Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward VoltageDrain Current and Gate Voltage Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

4 5 6 7 80.1

1

10

150oC

*Notes:

1. VDS = 20V

2. 250s Pulse Test

25oC

ID,DrainCurrent[A]

VGS,Gate-Source Voltage[V]0.1 1 10

0.1

1

10

30

*Notes:

1. 250s Pulse Test2. TC = 25

oC

VGS= 15.0V

10.0V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

ID,DrainCurrent[A]

VDS,Drain-Source Voltage[V]

0.02

0 6 12 181.4

1.8

2.2

2.6

*Note: TJ = 25oC

VGS = 20V

VGS = 10V

RDS(ON)[],

Drain-SourceOn-Resistance

ID, Drain Current [A]

0.4 1.0 1.6 2.21

10

*Notes:

1. VGS

= 0V

2. 250s Pulse Test

150oC

IS,Re

verseDrainCurrent[A]

VSD

, Body Diode Forward Voltage [V]

25oC

30

0.1 1 100

200

400

600

800

1000

Coss

Ciss

Ciss = Cgs + Cgd(Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

*Note:

1. VGS = 0V

2. f = 1MHz

Crss

Capacitanc

es[pF]

VDS, Drain-Source Voltage [V]

30 0 4 8 120

2

4

6

8

10

*Note: ID = 4A

VDS = 100V

VDS = 250V

VDS = 400V

VGS,Gate-Sou

rceVoltage[V]

Qg, Total Gate Charge [nC]

7/29/2019 FDPF5N50UT

4/10

FDP5N50U

/F

DPF5N50UTN-Channe

lMOSFET,FRFET


Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. Maximum Safe Operating Areavs. Temperature - FDP5N50U

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current- FDPF5N50UT vs. Case Temperature

Figure 11. Transient Thermal Response Curve - FDP5N50U

-75 -25 25 75 125 1750.8

0.9

1.0

1.1

1.2

*Notes:

1. VGS = 0V

2. ID = 250A

BVDSS,[Normalized]

Drain-SourceBreakdownVoltag

e

TJ, Junction Temperature [oC]

1 10 100 10000.01

0.1

1

10

50s

100s1ms

10ms

ID,DrainCurrent[A]


Operation in This Area

is Limited by R DS(on)

*Notes:

1. TC = 25oC

2. TJ = 150oC

3. Single Pulse

DC

30

25 50 75 100 125 1500

1

2

3

4

5

ID,DrainCurrent[A]

TC, Case Temperature [oC]

1 10 100 10000.01

0.1

1

10

30s

100s1ms

10ms

ID,DrainCurrent[A]


Operation in This Area

is Limited by R DS(on)

*Notes:

1. TC = 25oC

2. TJ = 150oC

3. Single Pulse

DC

30

10-5

10-4

10-3

10-2

10-1

100

101

0.01

0.1

1

0.01

0.1

0.2

0.05

0.02

*Notes:

1. ZJC(t) = 1.4oC/W Max.2. Duty Factor, D= t1/t23. TJM - TC = PDM * ZJC(t)

0.5

Single pulse

ThermalRespo

nse[ZJC]

Rectangular Pulse Duration [sec]

3

t1

PDM

t2

7/29/2019 FDPF5N50UT

5/10

FDP5N50U

/F

DPF5N50UTN-Channe

lMOSFET,FRFET


Typical Performance Characteristics (Continued)

Figure 12. Transient Thermal Response Curve - FDPF5N50UT

10-5

10-4

10-3

10-2

10-1

100

101

102

103

0.01

0.1

1

10

0.01

0.1

0.2

0.05

0.02

*Notes:

1. ZJC(t) = 4.5oC/W Max.2. Duty Factor, D= t1/t23. TJM - TC = PDM * ZJC(t)

0.5

Single pulse

ThermalResponse[ZJC]

Rectangular Pulse Duration [sec]

0.003

t1

PDM

t2

7/29/2019 FDPF5N50UT

6/10

FDP5N50U

/F

DPF5N50UTN-Channe

lMOSFET,FRFET


Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

7/29/2019 FDPF5N50UT

7/10

FDP5N50U

/F

DPF5N50UTN-Channe

lMOSFET,FRFET


Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

Driver

RG

Same Typeas DUT

VGS dv/dt controlled by RG ISD controlled by pulse period

VDD

L

I SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period--------------------------

DUT

VDS

+

_

Driver

RG

Same Typeas DUT

VGS dv/dt controlled by RG ISD controlled by pulse period

VDD

LL

I SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period--------------------------D =Gate Pulse Width

Gate Pulse Period--------------------------

7/29/2019 FDPF5N50UT

8/10

FDP5N50U

/F

DPF5N50UTN-Channe

lMOSFET,FRFET


Mechanical Dimensions

TO-220

7/29/2019 FDPF5N50UT

9/10

FDP5N50U

/F

DPF5N50UTN-Channe

lMOSFET,FRFET


Package Dimensions

Dimensions in Millimeters

TO-220F Potted

* Front/Back Side Isolation Voltage : AC 2500V

7/29/2019 FDPF5N50UT

10/10

FDP5N50U

/FDP

F5N50UTN-ChannelM

OSFET,FRFET

FDP5N50U / FDPF5N50UT Rev.C1

www.fairchildsemi.com

10

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE

SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,

WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICYFAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THEEXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) areintended for surgical implant into the body or (b) support or sustain life,and (c) whose failure to perform when properly used in accordance withinstructions for use provided in the labeling, can be reasonablyexpected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to causethe failure of the life support device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

2CoolAccuPowerAX-CAP*BitSiC

Build it NowCorePLUSCorePOWERCROSSVOLTCTLCurrent Transfer LogicDEUXPEED

Dual CoolEcoSPARK

EfficentMaxESBC

Fairchild

Fairchild Semiconductor

FACT Quiet Series

FACT

FAST

FastvCoreFETBenchFlashWriter *FPS

F-PFSFRFET

Global Power ResourceSM

Green BridgeGreen FPSGreen FPS e-SeriesGmaxGTOIntelliMAXISOPLANARMarking Small Speakers Sound Louderand BetterMegaBuckMICROCOUPLERMicroFETMicroPakMicroPak2MillerDriveMotionMaxMotion-SPMmWSaver

OptoHiTOPTOLOGIC

OPTOPLANAR

PowerTrench

PowerXSProgrammable Active DroopQFET

QSQuiet SeriesRapidConfigure

Saving our world, 1mW/W/kW at a timeSignalWiseSmartMaxSMART STARTSolutions for Your SuccessSPM

STEALTHSuperFET

SuperSOT-3SuperSOT-6SuperSOT-8SupreMOS

SyncFETSync-Lock

*

The Power Franchise

TinyBoostTinyBuckTinyCalcTinyLogic

TINYOPTOTinyPowerTinyPWMTinyWireTranSiC

TriFault DetectTRUECURRENT*SerDes

UHC

Ultra FRFETUniFET

VCXVisualMaxVoltagePlusXS

Datasheet Identification Product Status Definition

Advance Information Formative / In DesignDatasheet contains the design specifications for product development. Specificationsmay change in any manner without notice.

Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a laterdate. Fairchild Semiconductor reserves the right to make changes at any time withoutnotice to improve design.

No Identification Needed Full ProductionDatasheet contains final specifications. Fairchild Semiconductor reserves the right tomake changes at any time without notice to improve the design.

Obsolete Not In ProductionDatasheet contains specifications on a product that is discontinued by FairchildSemiconductor. The datasheet is for reference information only.

ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporations Anti-Counterfeiting Policy. Fairchilds Anti-Counterfeiting Policy is also stated on our external website,www.Fairchildsemi.com, under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of theirparts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failedapplication, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from theproliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or f rom Authorized FairchildDistributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized FairchildDistributors are genuine parts, have full traceability, meet Fairchilds quality standards for handing and storage and provide access to Fairchilds full range ofup-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address andwarranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild iscommitted to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

Rev. I61

fdpf5n50ut

Documents