1

1.1

1.1.1

2007 1 7501 1

2006 1 3933 2

3C

1.1.2

2005 28

21 9

10 1 3

2006

15395 10%(3,054

) 14%3

1

IPA

solvent

1 4

2

1996.10.14

70

1997.10.03 100

1997.11.11

20

1999.09.22 2500

2000.03.31

2 11

4000

2000.06.09 13 2

2000.09.10 100

2000.12.25 8 3000

2004.05.01 1 100

2005.11.23

1 50

2006.10.12 6000

2008.1.6 3

1

+

1. 2.

3. or 4. 5.6.

1 5

3

1.1.3 2006

2 2006

26

13 7 6

4

2 2006

ERC

1

2006

1

FAB

0.5hr

*1

2

2006

1

SUB-FAB

1hr*1

3

ERC

3

2006

1

PM

FAB

3hr*1

4

2006

2

SUB-FAB

1hr*5

5

5

2006

2

VESDA

FAB

1hr*1

3

6

2006

2

VESDA

1hr*1

3

4

FAB

7

2006

2

PH

7

SUB-FAB

0.5hr

*2

8

2006

2

Sub-FAB

FAB

SUB-FAB

3hr*1

9

2006

2

ClF3

SUB-FAB

1hr*6

8

10

2006

2

FAB

1r*1

11

2006

2

Dry Pump

SUB-FAB

1hr*1

5

ERC

12

2006

3

move in

FAB

5hr*1

13

2006

3

FAB

2hr*1

14

2006

3

SUB-FAB

78hr*

1

15

2006

3

VESDA

FAB

1hr*2

5

16 2006 1hr*1

5

3

VESDA

SUB-FAB

8

17

2006

4

PH

SUB-FAB

1hr*8

18

2006

5

FAB

1hr*2

19

2006

6

VMB

FAB

1hr*1

5

20

2006

6

FAB

3

5hr*1

21

2006

7

VESDA

FAB

2hr*5

8

22

2006

7

FAB

146hr

*1

23

2006

7

SUB-FAB

1hr*3

5

24

2006

7

5hr*1

6

FAB

25

2006

8

PH

SUB-FAB

1hr*1

2

26

2006

8

FAB

2hr*1

27

2006

9

FAB

8hr*1

28

2006

9

FAB

24hr*

1

29

2006

9

SUB-FAB

1hr*5

30

2006

10

FAB

1hr*1

31

2006

10

VESDA

SUB-FAB

1hr*3

5

32

2006

10

VMB

3hr*1

2

PP

7

SUB-FAB

33

2006

11

FAB

26hr*

1

34

2006

11

PH3

SUB-FAB

1hr*3

6

35

2006

12

FAB

4hr*1

36

2006

12

SUB-FAB

8hr*1

37

2006

12

3hr*1

Emergency Response CenterERC

8

2004

15 7

1.2

1.2.1

3

2 2006

0

2

4

6

8

10

12

14

16

18

0

20

40

60

80

100

%

%

9

24% 73%

9

65nm 2000

mm*2100mm

OHSAS18000

ISO14000 OHSAS18000

3 8

10

inherently safer

4

1.2.2

2300

10 3

20

40 11

4 10

11

5

1.2.3

3C supply chain

just in time, JIT

fire

explosiongas leakagepower interrupted

6

5 12

12

1.2.4

3

3

Polycrystalline

Growth

Polycrystalline

Cutting and Polish

Oxide

Thermal Process

diffusion

Physical Vapor

DepositionPVD

Chemical Vapor

6 13

13

Deposition CVD

photolithography

etching

RF

14

ion implantation

4

Chemical

Mechanical Polish

Wafer

Cleaning Processing

Equipment

Package

14

facility system

1.2.5

4

4

/

SiH4

,SiO2

B2H6 BPSG

NH3 Si3N4

H2

TEOS

SiO2,

SiH2Cl2

Si3N4

TiCl4

Tin/Ti

CVD

Chemical Vapor

Deposition

WF6 Six or W

CF4 SiO2, Si3N4,

Al

CHF3 SiO2, Si3N4

O2 Dry Etching

SF6 SiO2, Poly,

Tin, W

H2SO4 Wet Etching

HNO3 Wet Etching

()

HCL

Wet Etching /

/

Wet Etching

Dry Etching

Methanol Wet Etching

15

PH3 N 3

BF3 P 5

AsH3 N 3

Ion implantation

BCl3 P 5

AZP4620

S1813

HMDS

NaOH

ACETONE

H2SO4

Photolithography

Mask

H2O2

KOH SiO2,

H2O2 Cu, W

H5NO CMP, SiO2

Trichlorethylene

HF CMP

ACETONE

CMP

Chemical

Mechanical

Polish H2SO4

Carrier

Gas

N2AreHe

1.2.6

EN ISO 12100-1

15

1.

2. 3. 4. 5. 6. X

16

7. 8.

5

5

H2SiH4AsH3PH3CH4LNGLPG

O2

SiH4AsH3PH3

1.2.7

6

6

Dows Fire & Explosion Index

16

FMF1+ Ghetto1+SPHtot

MF0~40

Ghetto0.25~1.5

Shot0.25~1.5

17

F

18

17

Dows Fire & Explosion Index

16

TTh+Ts/1001+ Ghetto+ Shot

The

Ts

T

19

18

19

m/t=2A2v2

A v

A B C D

A 10min

B 30min

C 1hr

D 2hr

Sub-FAB

Clean Room

P

+

20

Q=VA

50ppm

30%

30%

30%

21

150V

150V~300 V

300 V

/

RF

/

22

23

1.3

24

1.

2.

3.

4.

5.

1.4

7

1.1

1.2

1.3

1.4

2.1

2.2

2.3

3.1

3.2

25

4.1

4.2

4.3

4.4

4.5

5.1

5.2

5.3

26

8

8

2.1

2.1.1

Integrated CircuitIC

logic operating

memorychipcontrollerdevice

wafer

transistor deviceswitch

resistorcapacitormetal

line20

27

transistor

Bipolar Junction Transistor BJT 7

Metal-Oxide-Semiconductor Transistor MOSFET

MOSFET BJT

MOS

1965 Intel Moore

1824

Moore's Law

8

7

CE

B

N NP

E

C

B

28

Memory

Logic System

DRAM 10Gbyte

CPUcontrol

MOS

518Gbyte

22

9

8 21

29

10

Physical Vapor DepositionPVDChemical Vapor

DepositionCVDPhotolithographyEtching

Vg

VdVs

Vsub

9

IC

wafer chip

device

30

DiffusionIon ImplantationOxidation

SEM

clean room

45nm

11 SEM

NMOS

12 NMOS

CMOSFET

VLSI process

Block Wafer

Oxidation Diffusion Deposition

Photolithography

Etch

Testing Cutting

Attach

Wire bonding

Package

10 23

Wafer map

11

31

NMOS

1. 13 2. 14 3. 15 () 4. 16 5. 17 6. 18

12 NMOS 24

1. FOX 2. N+N 3. PP 4. Poly 5. Wsix 6. BPSG7. Al

Si3N4+SiO2passivation

P-Si substrate

Al

BPSG

N+ N+ P P

Poly

WSix

FOX FOX

Drain Source Gate

32

Si3N4

Si3N4 LOCOS

P CMP

SiO2 Si3N4

1. SiO2 CVD

2. LPCVD Si3N4

()

FOX

FOX

LOCOS

Si3N4 Si3N4

Si3N4

P-Si

SiO2

LPCVD

P-Si

PR

1

Si3N4

P-Si

PR

Si3N4

P-Si

()

P-Si

FOX

P

FOX

P

Si3N4

()

P-Si P

FOX

F2

13

33

14

WSix LPCVD WSix()

1. SiO2 ()

2. RCA 3. ()

SiO2()

Poly

LPCVD Poly ()

PSG HF

WSix Poly

WSix Poly

MOS

P-Si P

FOX FOX

P

SiO2

LPCVD

P-Si P

FOX FOX

P

Poly

( PSG HF )

LPCVD

P-Si P

FOX FOX

P

Poly

WSix()

P-Si P

FOX FOX

P

Poly

WSix()

PR

2

P-Si P

FOX FOX

P

Poly

WSix

PR

H2SO4

34

15 ()

()

(N-)

()LDD

1. CVD SiO2 ( Si3N4 MOS DC )

2.

3. ()

N+

() N

P-Si

FOX FOXPoly

WSix

P

N N

P

()

P-Si

FOX FOXPoly

WSix

P

N N

P

CVD SiO2

P-Si

FOX FOXPoly

WSix

P

N N

P

P-Si

FOX FOXPoly

WSix

P

N+ N+

P

()

35

16

BPSG

BPSG NMOS

BPSG

CVD BPSG( MOS )

H2SO4

Al ()

DC Ti DC TiN

DC DC TiN

CVD

P-Si

FOX FOXPoly WSix

P N+ N+

P

PR

P-Si

FOX FOXPoly WSix

P N+ N+

P

3

BPSG

PR

P-Si

FOX FOXPoly WSix

P N+ N+

P

BPSG

BPSG

P-Si

FOX FOXPoly WSix

P N+ N+

P

BPSG

BPSG

P-Si

FOX FOXPoly WSix

P N+ N+

P

Al

DC

BPSG

36

18

PR

5

PR

Al BPSG

P-Si

FOX FOXPolPoly

P

P N+

P

Si3N4+SiO2

17

PR

4

PR PR

BPSBPSG

P-SP-Si

FOXFO

FOXO

PolPoly

P

P N+

+P

P

Al

Al BPSBPSG

P-SP-Si

FOXFO

FOXO

PolPoly

P

P N+

+P

P

APCAPCVD or PECVD

Al BPSBPSG

P-SP-Si

FOX FOXPoly WSix

P N+

P

Si3N4+SiO2

Al

Al

APCVD PECVD 4500C Si3N4+SiO2

37

2.1.2

19

9

24

9

HFNH4F

H3PO4CH3COOHHNO3

HFHNO3CH3COOHKOH

H3PO4

HFHNO3H2O

NH4OHH2O2

HNO3HCL

HNO3HCL

HNO3H2O

CH3COOHHNO3HCL

HNO3HCLH2O

19 25

38

HNO3HF

20

21

/

21

20

39

2.1.3

12

25 Methanol N-396

Dilute sulfuric acid and hydrogen peroxideDSP

12

Methanol N-396

DSPDilute sulfuric acid and

hydrogen peroxide

DSPH2SO4H2O290%

10% N-396

22

2.1.4

FLAMMABLE

LIQUID

3

CORROSIVE

8

22

40

2.2

2.2.1

Thin Film Transistor Liquid Crystal Display

TFT-LCD 7

20 cassette 300 26

ArrayCell

23

12

N-396

12

DSP

41

Module

Mask

Color FilterCF

24

2.2.2

25

Cell Module Array

24 27

42

chamberMonitor

Control panelHeaterCoolerRF

generatorEquipment cover

2000mm*2100mm

25

Chamber

Exhausts

Gas Box

Special Gas

Vacuum Pump

Cable

Foundation

To SUB-FAB

RF

43

2.2.3

98/37/EEC

26

Type A: EN ISO-12100-1

()

Type B B1: EN 954-1 EN 60204-1

Type C EN 81-1/-2 / EN 115

EN ISO-12100-2()

B2: EN 418 EN 574 EN 1088 EN 61496-1

EN 201 -- EN 415 EN 692 -

A

B

C

26 15

44

EN ISO 12100-1

28 27

28

11

27

28 28

45

1.

TFT

plasma

29

/

29

/

46

2.

30

1

No

Yes

30 29

47

2

EN ISO 12100-1

15

A

B

C

D

E

F X

G

H

3

30

= *

1*10-6

4

48

SEMI-S10ISO13849EN954-1BS8800

SEMI-S10

31

3. 11

32

A

B

C

D

E

1

2

3

4

31 31

49

EN ISO 12100 32

4.

10

10

1

2

3

4

32 15

50

interlock

EN-954-1 33

51

B 1 2 3 4

33 EN954-1 15

1 S

S1()S2()

Robot

2 F

F1F2

3 P

P1P2

Robot250mm/sec

11

11

EN954-1

S1

F1

P1 P1

P2 P1

P2

52

B

()

1

B

B

Catagory1

2

B

Catagory2

3

B

1.

2.

Catagory3

4

B

1.

Catagory4

53

2.

5.

1. (Radio FrequencyRF)

Chemical Vapor DepositionCVD

Dry etcher

2.

APR

3. (AMHS)

RobotRGVstocker

4.

54

2.2.4

2.3

2.3.1

34

11

55

Comp erasure Dry Air

wastevacuum

exhaustdrainscrubber

35

2.3.2

89 93

100 34

500 /hr

Sub-FAB

FAN

P

Foundation

35 33

56

36

161KV

37

3161kV3

22.8KV 36.6KV 34.16KV3480V 3 208V1 277V1

120V 1 105V

36 35

57

12

12

ACB

GCBVCBOCB

BUS

Way

Cable Tray

37

58

SCADA

Human

error

13

real powerreactive power

complex power

13

8000C

59

2.3.3

14

14

1

SEMI-S2

2

VIHz

KW

60

3

4

5

AT

AFIC

6

layout

7

3~6

8

9

power consule 38

61

2.3.4

38

Sub-FAB

440V

FAB

Foundation

GIS

Foundation

22.8KV 161KV

62

39

63

3.1

Kletz

3.1.1

1. Chemical process and integration

Kletz Trevor 1984 12 Bhopal

(Intensification)(Substitution)

(Attenuation)(Limitation of Effects)

36

2. Inherently safer plants,an update

Kletz Trevor Friendly plants

37

3. Inherently safer plants,an update

Kletz Trevor

38

4. Chemical process and integration

Robin Smith

Kletz Trevor

39

64

5. Inherent safety and computer aided process design

Edwards Lawrence

40

3.1.2

1.

41

2.

(

)

65

165 7.43bara

5% 25% 12.1

13.1bara 165/ 12barg

(Upper flammability)

17% 7.5%

160 5%(K/A ratio)

4

42

3.

SEMI-S10

ISO-13849

Array Low

Very Low Medium Low High

Medium High Low

Low Very Low

A 5 5.5

5 7.5

86

43

3.1.3 11

11 44 40

66

1. (Intensification)

2. (Substitution)

3. (Attenuation)

40 45

67

4. (Limitation of Effects)

PVC

5. (Simplification)

6. (Avoiding Knock-on Effect)

7. (Making Incorrect Assembly Impossible)

68

41

8. (Making Status Clear)

9. (Tolerance)

10. (Ease of Control)

41

69

11. (Software)

SCADA

interlock

3.1.4

15

11

15 44

70

3.1.5 SEMI-S2-93

SEMI-S2

16

fail safe

fault tolerant

16 SEMI-S2-93 31

safety-rela

ted interlock

1. (Critical)(High)(Medium)

2. (Hardware-based device) Relay

(Firmware-based device) ROMIC

(Software-based device) PLC PC

chemicals

1.

2. ()

3.

ionizing

radiation

1. 2.

71

non ionizing

radiation

1. 2.

audio noise

80

ventilation

and exhaust

1. ()

1/2 1/3

2. (),

72

electrical

1.

30

42.2 60 240

2. (UPS)(Pump)(Chiller)(Heat Exchanger)RF (RF

generator)(Heat Controller)

(NRTL)

3.

4. 10,000 rims AIC

5. ( lockout) 6. 3.5 (am) 7. 0.1 () 8.

73

emergency

shutdown

1. EMO 240 -

1( 24 )

2(/

)

3

EMO

2. (Hardware-based) 3. 4. 5. 6. 7. 8. 3 EMO

robotics and

automation

1. (Cassette)

2. (Robot)

hazard

warning

1. 2. SEMI S1

74

earthquake

protection

1. 94%

63%

2. 0.35g

3. 0.35g

4. (tie-ins)(attachments)(seismic anchorage points)

fire

protection

1. 2.

17

SEMI-S2

SEMI-S2

17 46

75

1. SEMI-S2

2.

3.2

3.2.1 Risk AssessmentSEMI S10

SEMI S10-Safety Guideline for Risk

Assessment

1.

1 hazrad

2 Likelihood

3 mishap

4 risk

5 Severity

2.

18

18

/

76

/

OSHA

3.

19

19

4.

31

SEMI S10

3.2.2

77

78

4.1

4.1.1

42 43

42

Exhausts

Panel

To SUB-FAB

Foundation

Chamber

Monitor

Load/Unload

79

wet bench

Methanol N-396

DSP

Dilute sulfuric acid and hydrogen peroxide

44

0.791 11oC 6.0~36.5%

N-396 Solvent 60% Solvent 20%

Polymer

Stripper

44

43

80

Side Wall PolymerSWP)

R-NH2 + H2OR-NH3+ + OH

-

2Al + 2OH- + 2H2O2AlO2

- + 3H2

DSP H2SO4 H2O2 90%

10% N-396

4.1.2

1. 12 A~L 25 2. N-396 DSP 3. 20

20

120 sec 300 sec 300 sec 600 sec

45 SEM

45 SEM

81

46 2

47 trend chart

Box plot

48

46 2

47

A B C D E F G H I J K

82

4.1.3

12 21

83.74% 85.04%

6.33% 6.53% 5.43% 4.33%

4.50% 4.10%

21

A 86.36 5.60 4.58 3.46

B 86.13 5.86 3.72 4.29

C 85.80 6.37 3.84 3.99

D 81.22 6.66 6.06 6.07

E 82.83 7.11 6.69 3.38

F 83.57 6.41 5.76 4.26

G 83.86 6.03 5.90 4.22

48

83

H 84.77 5.48 5.67 4.08

I 80.10 7.69 5.27 6.94

J 81.20 5.71 7.85 5.24

K 85.33 7.42 4.17 3.08

L 83.69 5.66 5.67 4.98

83.74 6.33 5.43 4.50

A 85.70 6.14 3.81 4.35

B 83.35 5.69 3.98 6.98

C 82.16 6.85 4.99 5.99

D 82.47 7.69 6.45 3.40

E 86.56 5.87 3.67 3.90

F 82.18 7.77 6.24 3.81

G 85.71 6.86 3.69 3.74

H 86.41 6.85 2.80 3.93

I 85.02 8.13 3.46 3.39

J 85.72 5.15 4.97 4.16

K 86.45 6.30 4.15 3.10

L 88.14 5.14 3.88 2.84

85.04 6.53 4.33 4.10

N-396

DSPDilute sulfuric acid and hydrogen peroxide

N-396

4.2

TFT-LCD

23 2004

2006

=/

84

4.2.1

1.

TFT-LCD

(A)

Load/Unload (B)transfer module(C)

Chamber process module (D)Vacuum System(E)

Gas supply system(F)RF system

2.

1

22

22

2

23

23

85

3

24

24

1.578*10-2

1.200*10

-3

3.540*10-5

2.210*10-2

6.880*10

-4

0.785*10

-3

2.650*10

-3

5.060*10-4

4.791*10-2

4

31 25

86

25

3. 11

33 EN954-1

26

26

1.

2. (MFC)

3.

4.

5.

6.

7.

8.

4

4

4

4

3

4

87

4.2.2

1.

TFT-LCD

stripper 70 striper

PumpNozzle

2.

1

27

2

28

28

3

88

29

29

3.250*10-3

2.010*10-2

1.540*10-3

4.791*10-2

4

31 30

30

3. 11

33 EN954-1

31

31

1.

2.

3.

4.

3

4

3

89

5.(

)

6.

7.

3

4

4.2.3

1.

TFT-LCD 150m/min

1.47m/s2

2.

1

32

32

2

33

33

3

90

34

34

1.665*10-2

2.340*10-4

4.791*10-2

4

31 35

35

3. 11

33 EN954-1

36

36

1.

2.

3.

4.

5.

6.

7.

4

4

4

4

4

3

91

8. 4

4.2.4

2007/1/20 49

3684

2.34 3.12

5.60

4.3

18

49

92

4.3.1

38

4.3.2

37

37

1. 2. 3. 4. 5.

1. 2. 3.

1.

2.

1.

2.

1. 2.

1. 2.

1.

93

2.

1.

2.

1. 2.

1. 2.

1. 2.

4.3.3

38

38

1.678*10-5

1.624*10-3

3.542*10-5

2.210*10-3

3.880*10-4

2.475*10-3

0.740*10-2

39

39

94

2.552*10-2

1.887*10-3

3.241*10-5

7.005*10-4

2.650*10-2

0.758*10-5

9.330*10-2

4.3.4

31 40

40

4.3.5

41

95

41

1

15

380V

220V

35M

PE

PVC

96

1

SCDA

50M

97

4.3.6

2007 1

2 7

200

50

4322

2 3 4 5 6 7 8

1

2

3

2006 2007

50

98

4.4

4.4.1

Chemical Vapor Deposition, CVD

51

LPCVD

4.4.2

BPSG CVD

SiH4PH3

B2H6

PO(OCH3)3B(OC2H5)3

SiH4 + 4PH3 + 2B2H6 + 9O2 SiO2 + 2P2O5 + 2B2O3 + 14H2

PO(OCH3)3 + B(OC2H5)3 P2O5 + B2O3 +CH3OCH3 + C2H5OC2H5

51

99

52 23

4.4.3

53

4.4.4

SilaneSiH4

SiO2

SiH4 + O2 SiO2 + 2H2

53

52

FLAMMABLE

GAS

2

FLAMMABLE

LIQUID

3

100

54

55

4.4.5

55

VMB

A

A

A-A

54

101

56

EMO 24V

57

58

56

57

102

59

60

58

59 60

103

62

63

62

61

104

64

11

65

64

63

105

66

67

68

65

66 67

106

4.4.6

4.5

42

42

68

107

12

83.74%85.04%6.33%

6.53% 5.43% 4.33%

4.50% 4.10% DSP

N-396

TFT-LCD

2007 1 20

3684

2.34

3.12

5.60

2007 1

7 2007

4322

108

5.1

69

N-396

DSPDilute sulfuric acid and hydrogen peroxide

2007/1/20

3684

4322

109

69

110

5.2

8 17

5 2 1 33

43

43

30 1 2

26 4 3

10 16 7

1 3 29

1 5 27

0 3 30

2 1 30

1 3 29

1 1 31

2 2 29

3 3 27

26 2 5

31 2 0

29 1 3

2 2 29

2 1 30

7 6 20

1 1 31

5 3 25

1 4 28

3 0 30

2 1 30

9 17 7

21 6 6

111

19 3 11

2 1 30

1 3 29

3 5 25

3 3 27

3 6 24

2 3 28

2 1 30

3 2 28

26 4 3

19 11 3

21 10 2

4 6 23

2 0 31

5 3 25

2 3 28

0 3 30

3 6 24

3 5 25

3 1 29

22 3 8

27 2 4

26 3 4

7 9 17

4 5 24

2 3 28

4 4 25

2 3 28

2 1 30

3 1 29

2 0 31

20 3 10

24 1 8

27 3 3

2 1 30

4 6 23

0 2 31

112

4 4 25

1 4 28

11 3 19

4 2 27

3 6 24

7 6 20

7 3 23

2 1 30

25 3 5

20 3 10

19 7 7

20 3 10

26 4 3

21 8 4

31 0 2

29 1 3

2 0 31

4 4 25

7 6 20

22 4 7

23 7 3

26 3 4

19 5 9

21 7 5

19 11 3

18 7 8

27 2 4

3 1 29

3 3 27

7 6 20

26 4 3

27 1 5

26 3 4

19 7 7

21 2 10

10 17 6

19 9 5

113

32 0 1

6 6 21

12 6 15

2 3 28

22 7 4

5 20 8

19 6 8

21 3 9

19 8 6

18 2 13

20 5 8

23 6 4

9 6 18

5 3 25

4 1 28

20 4 9

26 1 6

20 3 10

21 2 10

27 2 4

19 5 9

19 7 7

26 1 6

7 6 20

8 3 22

4 4 25

26 2 5

19 6 8

20 3 10

19 7 7

21 4 8

18 5 10

20 6 7

30 0 3

22 3 8

4 22 7

21 4 8

114

24 3 6

19 4 10

25 5 3

20 5 8

24 3 6

22 3 8

26 3 4

21 6 6

8 16 9

4 23 6

5 20 8

21 5 7

11 7 15

5 20 8

21 4 8

26 4 3

18 5 10

7 5 21

20 3 10

24 2 7

19 8 6

21 4 8

25 4 4

20 5 8

26 4 3

19 5 9

4 8 21

21 2 10

21 3 9

19 2 12

25 1 7

27 3 3

26 5 2

25 4 4

19 7 7

31 2 0

27 2 4

115

16 7 10

18 7 8

20 3 10

26 2 5

27 1 5

7 18 8

6 22 5

20 1 12

18 7 8

21 5 7

19 8 6

10 9 14

19 7 7

24 5 4

19 5 9

18 2 13

10 15 8

19 8 6

26 4 3

25 4 4

19 5 9

23 7 3

12 3 18

19 6 8

20 3 10

19 8 6

21 2 10

17 7 9

20 3 10

21 4 8

26 3 4

18 2 13

26 2 5

27 1 5

21 4 8

19 8 6

21 4 8

116

25 4 4

6 19 8

12 14 6

19 7 7

20 6 7

8 4 21

4 4 25

19 4 10

7 8 18

18 2 13

21 4 8

1

11

10

43

44

44

117

5.3

70 71

118

71

70

119

ThermodynamicsKinetics

1. Thermodynamics

S=Q/T0

G=E+W-T*S

SEntropyTQE

Internal EnergyWWorkG

Free Energy

2. Kinetics

J=-D*dC/dx cm2/sec

CJ

FluxD Diffusion

CoefficientdC/dx

dC/dt=D*d2C/dx2 cm2/sec

1

Cx,t= C0,t=Cs t

Cx,t= C,t=0

120

Cx,t= Cx,0=0

Cx,t= Cs*erfcx/2Dt

erfc Complementary Error Function

2

Gaussian Distribution

Cx,tdx=Q0

Cx,t= Q0Dt*exp-x2/4Dt

121

1. 2007 FPD 2008

2. 6 6 2007

3. 96 12 27

4.

5. 6.

2007 96

11 2

7. 95 3 16

8. Vol.54No.3pp.33-4896 6

9.

10.

11. 97 1 5

12. 64 9 p2596 9

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16. Dows companyFire & Explosion Index Hazard classification Guide 6th editionDow

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20. 21. http://zh.wikipedia.org/wiki/ 22. NVIDIA TESLATM (HPC)

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23. VLSI 24.

25. .

26. http://www.auo.com/auodev/technology 27.

28. Safety of machinery - Basic concepts - General principles for design - Part 1: Basic terminology, methodologyEN ISO

12100-1:2004

29. TFT-LCD 16 3

97 3

30.

31. SEMI facilities standards and safety guidelineSEMI Taiwan committee2002

32. 2008 33.

63 6p1896 6

34. 207 9 95 9

35. http://www.taipower.com.tw 36. Kletz, Trevor,Friendly plantsChemical Engineering

Progress,pp18-26(July,1989)

37. Kletz, Trevor,Inherently safer plants,an updatePlant Operations Progress,10,No.2,pp18-26(April ,1991a)

38. Trevor Klutzprocess plantsa handbook for Inherently Safer DesignTaylor Francis1998

39. Robin Smith Chemical process and integrationJohn Wiley & Sone2005.

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41.

42.

43.

44. 45.

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